MT25QL256ABA8E12-1SIT FLASH - NOR Memory IC 256Mbit SPI 133 MHz 24-T-PBGA (6x8)
Datasheet:MT25QL256ABA8E12-1SIT
| Category | Memory |
| Mfr | Micron Technology Inc. |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb |
| Memory Organization | 32M x 8 |
| Memory Interface | SPI |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 8ms, 2.8ms |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C(TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-TBGA |
| Supplier Device Package | 24-T-PBGA (6x8) |
| Base Product Number | MT25QL256 |
Features
• SPI-compatible serial bus interface
• Single and double transfer rate (STR/DTR)
• Clock frequency
– 133 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
• Dual/quad I/O commands for increased throughput up to 90 MB/s
• Supported protocols: Extended, Dual and Quad I/O both STR and DTR
• Execute-in-place (XIP)
• PROGRAM/ERASE SUSPEND operations
• Volatile and nonvolatile configuration settings
• Software reset
• Additional reset pin for selected part numbers
• 3-byte and 4-byte address modes
– enable memory access beyond 128Mb
• Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
• Erase capability
– Bulk erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
• Erase performance: 400KB/sec (64KB sector)
• Erase performance: 80KB/sec (4KB sub-sector)
• Program performance: 2MB/sec
• Security and write protection
– Volatile and nonvolatile locking and software write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
• Electronic signature
– JEDEC-standard 3-byte signature (BA19h)
– Extended device ID: two additional bytes identify device factory options
• JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
Voltage
2.7-3.6V-
Density
- 256Mb
Device stacking
- Monolithic
Device generation
Die revision
Pin configuration
- RESET# and HOLD#
Sector size
- 64KB
Packages - JEDEC-standard, RoHScompliant
- 24-ballT-PBGA 05/6mm x 8mm(5 x 5 arraw)
24-ballT-PBGA 05/6mm x 8mm(4 x 6 array)
16-pin SoP2, 300 mils
(SO16W,S016-Wide,SoIC-16)
W-PDFN-8 6mm x 5mm
lP8 6mm x 5mm
W-PDFN-8 8mm x 6mm(MLP8 8mm x 6mmSecurity features
Standard security
Special options
Standard
Automotive
Operating temperature range
From -40°C to +85C
From -40°C to +105°C-
- From-40°C to +125°C
Data Picture:
Product Tags:
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MT25QL256ABA8E12-1SIT TR Micron NOR Flash Memory Ic Chip 256Mbit SPI 133 MHz 24-T-PBGA 6x8 Images
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